tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. ? collectoremitter saturation voltage v ce(sat) = 1.2 vdc (max) @ i c = 3.0 adc ? collectoremitter sustaining voltage v ceo(sus) = 60 vdc (min) tip31a, tip32a = 80 vdc (min) tip31b, tip32b = 100 vdc (min) tip31c, tip32c ? high current gain bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to220 ab package ???????????????????? ???????????????????? maximum ratings ???????? ? ?????? ? ???????? rating ???? ? ?? ? ???? symbol ??? ? ? ? ??? tip31a tip32a ???? ? ?? ? ???? tip318 tip32b ??? ? ? ? ??? tip31c tip32c ??? ? ? ? ??? unit ???????? ???????? collectoremitter voltage ???? ???? v ceo ??? ??? 60 ???? ???? 80 ??? ??? 100 ??? ??? vdc ???????? ???????? collectorbase voltage ???? ???? v cb ??? ??? 60 ???? ???? 80 ??? ??? 100 ??? ??? vdc ???????? ???????? emitterbase voltage ???? ???? v eb ???????? ???????? 5.0 ??? ??? vdc ???????? ? ?????? ? ???????? collector current continuous peak ???? ? ?? ? ???? i c ???????? ? ?????? ? ???????? 3.0 5.0 ??? ? ? ? ??? adc ???????? ???????? base current ???? ???? i b ???????? ???????? 1.0 ??? ??? adc ???????? ? ?????? ? ???????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ???????? ? ?????? ? ???????? 40 0.32 ??? ? ? ? ??? watts w/ c ???????? ? ?????? ? ? ?????? ? ???????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ? ?? ? ???? p d ???????? ? ?????? ? ? ?????? ? ???????? 2.0 0.016 ??? ? ? ? ? ? ? ??? watts w/ c ???????? ? ?????? ? ???????? unclamped inductive load energy (note 1) ???? ? ?? ? ???? e ???????? ? ?????? ? ???????? 32 ??? ? ? ? ??? mj ???????? ? ?????? ? ???????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???????? ? ?????? ? ???????? 65 to +150 ??? ? ? ? ??? c 1. i c = 1.8 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100 w .. 4 1 2 3 3 ampere power transistors complementary silicon 6080100 volts 40 watts to220ab case 221a09 style 1 marking diagram see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information xxx = specific device code: 31a, 31b, 31c, 32a, 32b, 32c a = assembly location y = year ww = work week ayww tipxxx http://onsemi.com style 1: pin 1. base 2. collector 3. emitter 4. collector ? semiconductor components industries, llc, 2002 april, 2002 rev. 7 1 publication order number: tip31a/d
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ????? ????? max ???? ???? unit ?????????????????????? ?????????????????????? thermal resistance, junction to ambient ????? ????? r q ja ????? ????? 62.5 ???? ???? c/w ?????????????????????? ?????????????????????? thermal resistance, junction to case ????? ????? r q jc ????? ????? 3.125 ???? ???? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (note 2) (i c = 30 madc, i b = 0) tip31a, tip32a tip31b, tip32b tip31c, tip32c ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 60 80 100 ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) tip31a, tip32a collector cutoff current (v ce = 60 vdc, i b = 0) tip31b, tip31c tip32b, tip32c ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ???? ? ?? ? ???? 0.3 0.3 0.3 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 60 vdc, v eb = 0) tip31a, tip32a (v ce = 80 vdc, v eb = 0) tip31b, tip32b (v ce = 100 vdc, v eb = 0) tip31c, tip32c ????? ? ??? ? ? ??? ? ????? i ces ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 200 200 200 ??? ? ? ? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? ???? ???? 1.0 ??? ??? madc ????????????????????????????????? on characteristics (note 2) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 1.0 adc, v ce = 4.0 vdc) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 10 ???? ? ?? ? ???? 50 ??? ? ? ? ??? ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 adc, i b = 375 madc) ????? ????? v ce(sat) ??? ??? ???? ???? 1.2 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 3.0 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? ???? ???? 1.8 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? currentgain bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ????? f t ??? 3.0 ???? ??? mhz ?????????????????????? ?????????????????????? smallsignal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 khz) ????? ????? h fe ??? ??? 20 ???? ???? ??? ??? 2. pulse test: pulse width 300 m s, duty cycle 2.0%.
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 3 figure 1. power derating t, temperature ( c) 0 100 0 1.0 160 2.0 3.0 60 80 40 140 4.0 turn-on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn-off pulse t 3 t 1 7.0 ns 100 < t 2 < 500 m s t 3 < 15 ns duty cycle 2.0% approx -9.0 v r b and r c varied to obtain desired current levels. scope r c r b v cc v in c jd << c eb -4.0 v figure 2. switching time equivalent circuit 0.03 figure 3. turnon time i c , collector current (amp) 0.02 0.1 3.0 0.07 1.0 1.0 i c /i b = 10 t j = 25 c t r @ v cc = 10 v t, time (s) m 0.5 0.3 0.1 0.05 0.05 0.3 0.5 t d @ v eb(off) = 2.0 v 0.03 0.7 2.0 0.07 0.7 t r @ v cc = 30 v 20 120 p d , power dissipation (watts) t c t a 0 10 20 30 40 t c t a
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 4 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z q jc(t) = r(t) r q jc r q jc (t) = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 0.2 0.02 0.01 v ce , collector-emitter voltage (volts) 10 20 5.0 50 100 figure 5. active region safe operating area 0.2 0.1 0.5 secondary breakdown limited @ t j 150 c thermal limit @ t c = 25 c (single pulse) bonding wire limit 1.0ms 100 m s 2.0 1.0 10 5.0 i c , collector current (amp) 5.0ms curves apply below rated v ceo tip31a, tip32a tip31b, tip32b tip31c, tip32c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.7 0.03 0.3 0.5 0.07 i c , collector current (amp) figure 6. turnoff time 3.0 t, time (s) m 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 1.0 2.0 3.0 0.2 0.5 1.0 5.0 0.1 2.0 3.0 0.3 v r , reverse voltage (volts) figure 7. capacitance 300 capacitance (pf) 200 100 70 50 30 10 20 40 30 t f @ v cc = 30 v t f @ v cc = 10 v t s i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t j = +25 c c eb c cb
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 5 v ce , collector-emitter voltage (volts) t j , junction temperature ( c) 10 3 -0.4 10 1 10 0 10 -2 10 2 10 -1 10 -3 10 7 10 5 10 4 10 2 10 6 10 3 i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region i c , collector current (amp) 300 500 0.05 0.07 0.3 3.0 0.03 100 70 50 30 10 7.0 0.1 v be , base-emitter voltage (volts) figure 10. aono voltages v ce = 2.0 v 5.0 0.7 1.0 0.5 1.6 2.0 2.0 5.0 20 1000 1.0 0.8 0.4 10 0 100 200 500 50 25 c t j = 150 c -55 c 1.2 1.4 0.003 i c , collector current (amps) 1.0 0.8 0.4 1.2 0.6 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 +2.5 i c = 0.3 a 20 60 80 100 120 160 140 40 v, voltage (volts) t j = 25 c 1.0 a 3.0 a 0.2 0.3 0.5 1.0 2.0 3.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) q +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 *applies for i c /i b h fe /2 t j = -65 c to +150 c * q vc for v ce(sat) q vb for v be figure 11. temperature coefficients , collector current (a) m i c -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cutoff region figure 13. effects of baseemitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces r be , external base-emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12)
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 6 ordering information device package shipping tip31a to220ab 50 units/rail tip31b to220ab 50 units/rail tip31c to220ab 50 units/rail tip32a to220ab 50 units/rail tip32b to220ab 50 units/rail tip32c to220ab 50 units/rail
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 7 package dimensions to220ab case 221a09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
tip31a, tip31b, tip31c, (npn), tip32a, tip32b, tip32c, (pnp) http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip31a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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